APPLICATION OF SEMICONDUCTOR DEVICES TO HIGH POWER DUPLEXERS.
Final rept. 8 Apr 64-8 Apr 66,
MICROWAVE ASSOCIATES INC BURLINGTON MA
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A high-power duplexer was constructed in C-band utilizing high-voltage PIN diodes as switching elements. The diodes are arranged to create a 180 degree phase shifter which switches the RF signal from one port of a balanced hybrid circuit to another. Sections of the report are devoted to a theoretical analysis of the phase shift duplexer, to a diode power handling study, and to the experimental work on single-section phase shifters and the 180 degree phase shifter. A two megawatt capability was achieved with a transmit loss of about 1 dB, a receive loss of 1.5 dB and a receiver isolation of 25 dB. The duplexer recovery time is less than one microsecond. Author
- Electrical and Electronic Equipment