Accession Number:
AD0802454
Title:
APPLICATION OF SEMICONDUCTOR DEVICES TO HIGH POWER DUPLEXERS.
Descriptive Note:
Final rept. 8 Apr 64-8 Apr 66,
Corporate Author:
MICROWAVE ASSOCIATES INC BURLINGTON MA
Personal Author(s):
Report Date:
1966-08-01
Pagination or Media Count:
66.0
Abstract:
A high-power duplexer was constructed in C-band utilizing high-voltage PIN diodes as switching elements. The diodes are arranged to create a 180 degree phase shifter which switches the RF signal from one port of a balanced hybrid circuit to another. Sections of the report are devoted to a theoretical analysis of the phase shift duplexer, to a diode power handling study, and to the experimental work on single-section phase shifters and the 180 degree phase shifter. A two megawatt capability was achieved with a transmit loss of about 1 dB, a receive loss of 1.5 dB and a receiver isolation of 25 dB. The duplexer recovery time is less than one microsecond. Author
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment