FAILURE MECHANISMS IN MOS TRANSISTORS.
Quarterly rept. no. 1, 28 Mar-28 Jun 66,
MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
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The main objective of the study is to determine the basic failure mechanisms characteristic of silicon isolated-gate field-effect transistors IGFET, identify the sources of failure, and develop techniques for reliability screening and stress testing of the finished device. The device selected for Unit Group 1 study is designated MM2103, a p-channel enhancement type IGFET. The instability of the device under the influence of high gate potential which was reported on last month has been observed on similar lab-processed devices. The cause of this instability is under investigation by the R and D group. Of the 10 sample devices undergoing temperature storage, 2 have exceeded the specification limit of 20 percent allowed change from the initial value on the IDSS sub 1 parameter. Step-stress testing has begun, but results are not available. Author
- Solid State Physics