Accession Number:

AD0801569

Title:

300 C SEMICONDUCTOR FOR POWER DEVICES.

Descriptive Note:

Interim technical rept. no. 1, 1 Jul-30 Sep 66,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1966-10-01

Pagination or Media Count:

21.0

Abstract:

The purpose of this study is to design and construct a 50-ampere rectifier capable of operating at an ambient temperature of 300 C. The rectifier must be capable of withstanding a peak inverse voltage of 150 volts. Gallium arsenide was selected as the currently most promising material for construction of a 50-ampere, 150-volt PIV, 300 C operating rectifier. N-N-P structures were grown epitaxially, and 50-mil-diameter mesa diodes were prepared. As a result of care in handling and dopant control, several diodes with up to 350-volt reverse breakdown were observed. It was shown that surface treatment plays a major role in bringing out and stabilizing the junction properties. A system of glassing in junctions was worked out using a combination of a vapor-deposited glass and a commercially available glass having a suitable thermal expansion coefficient. Work on a low-resistance, high-temperature contract was started, and a suitable package was designed and ordered. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE