FEASIBILITY STUDY OF METAL BASE TRANSISTORS.
Final rept. 20 Jan 65-31 Mar 66,
SPRAGUE ELECTRIC CO NORTH ADAMS MA
Pagination or Media Count:
The purpose of the work carried on under Phase 2 of this contract was to investigate materials and techniques for the controlled fabrication of semiconductor-metal-semiconductor layered structures and their structural and electrical properties with a view toward application for microwave metal base transistors. Vital areas of investigation were 1 evaluation of source materials, 2 prediction of layer thickness, 3 resistance of the metal layer to thermal degradation, 4 structural relationships between metal layer and silicon substrate, 5 measurement of attenuation length of carriers in the metal, and 6 influence of collector back-scattering. These studies were carried out by 1 chemical and X-ray investigation of the source material reactions in the entraining ambient, 2 investigation of the time dependence of the deposition of the metal layers, 3 change in the attenuation of microwaves by the metal layer caused by its thermal degradation, 4 electron diffraction studies of the deposited metal layers, and 5 photoresponse measurements in diodes fabricated by the deposition of the metal on silicon. The metal layers were limited to molybdenum and molybdenum silicides.
- FEASIBILITY STUDIES
- METAL COATINGS
- MOLYBDENUM ALLOYS
- SINGLE CRYSTALS
- VAPOR PLATING
- SEMICONDUCTOR DIODES
- CHARGE CARRIERS
- HIGH FREQUENCY
- VERY HIGH FREQUENCY
- Electrical and Electronic Equipment