RADIATION EFFECTS ON DIELECTRIC MATERIALS.
Quarterly rept. no. 4, 1 Mar-31 Jun 66,
GENERAL DYNAMICS SAN DIEGO CA GENERAL ATOMIC DIV
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The ion-implantation process has been used to form electrodes on a Mylar dielectric film. Improvements on the ion-implantation apparatus to provide a more stable discharge in a system which provides liquid-nitrogen cooling of the substrate are described. Measurements of the radiation-induced conductivity in Mylar from 93 K to 290 K indicate that the time constants of delayed conductivity decay are insensitive to temperature but the magnitude of the prompt and delayed components do have a temperature dependence. The early portion of the decay can be fitted to a hyperbolic form. Differences between transient effects measurements in mica and Mylar capacitors were on the order of 30 percent to 40 percent with almost an order of magnitude difference in measurements of a tantalum oxide capacitor. This comparison is part of an effort to determine the source of large discrepancies in reported transient effects data on capacitors. Further discussion of these discrepancies based on a study of published data is presented. Author
- Miscellaneous Materials
- Radioactivity, Radioactive Wastes and Fission Products