Accession Number:

AD0787729

Title:

Photoluminescence from Ion Implanted Silicon,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1974-08-01

Pagination or Media Count:

118.0

Abstract:

Photoluminescence studies have added new information on the nature of radiative defects resulting from the implantation of boron, phosphorus, nitrogen, carbon and oxygen ions into silicon. The influence of the species of the implanted ion, the substrate, and annealing character of the radiative centers provide substantiating evidence for the recent identification of peaks C 0.790 eV and G 0.970 eV with radiative recombination at a carbon modified A-center and carbon interstitialcy defect, respectively. Modified author abstract

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE