Evaluation of a Low Energy Ion Implantation System.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
Pagination or Media Count:
A machine which was originally designed as a sputtering apparatus and redesigned for use as an ion implantation system, was modified, and used to implant N into p-type silicon at low energy 24 keV. Electrical characteristics of the resulting implanted layer were determined by Hall effect measurements using the van der Pauw technique. A second implantation of N into p-type silicon was done at higher energy 145 keV using the system at the Aerospace Research Laboratories. The electrical characteristics of the resulting implanted layer, determined by conventional Hall effect measurements, were found to be comparable to those of the low energy implant. In addition, the possibility of using the low energy machine to implant boron and phosphorus was investigated. Modified author abstract
- Particle Accelerators
- Solid State Physics