Accession Number:

AD0787646

Title:

Annealing of Sputtered Beta Silicon Carbide,

Descriptive Note:

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Report Date:

1974-10-01

Pagination or Media Count:

8.0

Abstract:

Using an RF sputtering and etching module silicon carbide was deposited upon the surface of 100 and 111 silicon, 111 110 100 tungsten, and 0001 alpha SiC. Almost all deposits were amorphous initially but after thermal annealing, the thin films on the 100 silicon and on 0001 alpha became single crystal layers. Silicodes of tungsten were formed on the tungsten substrates after annealing. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE