Damage Profiles in Silicon and Their Impact on Device Reliability.
Technical rept. no. 4, 6 Jun 72-31 Dec 75,
INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB
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This work examines the behavior of crystal defects in silicon and their impact on semiconductor device reliability. This report substantiates previous findings of the influence of damage on the Si-SiO2 interface properties. Using the technique of impact sound stressing, micro-damage is introduced into otherwise perfect silicon surfaces in a controlled manner. Structural changes in the original defect pattern due to oxidation are studied and a cause and effect relationship between damage and oxidation is established. Dislocations are shown to transform into stacking faults, while microsplits generate dislocations and fill up with SiO2 through internal oxidation. The importance of damage-free surfaces for high quality silicon wafers is reconfirmed. Damage-free silicon surfaces are produced by pulling silicon crystals in ribbon form. Modified author abstract
- Solid State Physics