Reliability Testing of Electron Bombarded Semiconductor Diodes.
WATKINS-JOHNSON CO PALO ALTO CALIF
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Reliability tests of reverse biased semiconductor diodes operating in electron bombarded semiconductor devices are described. One device operating Class B at 20 W sq mm power dissipation density has been tested in excess of 10,000 hours. Another similar device is approaching 10,000 hours of operation. No degradation in performance characteristics has been observed in either device. The diodes used in these devices incorporate state-of-the-art passivation techniques including pillar supported integral metal beam shield. Author
- Electrical and Electronic Equipment