Radiation Effects and Material Studies in PbSnTe.
Annual rept. 1 Aug 73-1 Sep 74,
INTELCOM RAD TECH SAN DIEGO CALIF
Pagination or Media Count:
The electrical and optical properties of Pb1-xSnxTe were measured before, during, and after various electron, gamma, and neutron irradiations, and during the subsequent isochronal annealing. These sample types fell into two categories - those with initial carrier densities 10 to the 17 powercc at 80K the solid-state recrystallized and epitaxial thin-film samples, and one with a low carrier density less than 10 to the 17th powercc at 80K a vapor-grown sample. A measurement of the energy bandgap from optical transmission studies on the high carrier density thin-film samples after an electron irradiation at 9K revealed an increase in the bandgap energy. Modeling of the changes in the electrical and optical properties explains the changes on the basis of defects introduced by the irradiation and of the general structure of the alloy. Correlating the radiation damage as a function of irradiating particles was pursued in an effort to provide a means of predicting the relative damage to be expected in various environments. Modified author abstract
- Radiation and Nuclear Chemistry
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics