Microwave Waveguide Modulators for CO2 Lasers
Semi-annual technical rept. no. 4, 25 Mar-25 Sep 1974
UNITED AIRCRAFT RESEARCH LABS EAST HARTFORD CT
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During this reporting period four significant advances have been made. The first two concern the structural quality of GaAs waveguides. The grating couplers which are an integral part of the waveguide structure are now being made by ion-beam milling technique instead of rf sputter-etching. This change of etching technique has provided remarkable improvement in the fabrication procedure. The second improvement involves the ruggedization of GaAs waveguide structure. The strength of a chemo-mechanically polished GaAs slab is very weak and has caused some difficulties during handling and processing cycles. The authors have developed a relatively strain-free metalization process by which thin layers of nickel-copper are deposited on the surfaces of GaAs slab. The metallic layer has provided a considerable strength to the GaAs waveguide structure. The next two significant accomplishments relate to the microwave aspects of the modulator development. One of the most significant result during this interm period is the experiment employing very high power to test the modulator. The result indicates that no failure is expected under a cw mode operation of this modulator at an input microwave power level in excess of 100 watts.
- Lasers and Masers