Improved Gallium Arsenide Light Emitting Diodes.
Rept. for 21 May 73-30 Jun 74,
SPECTRONICS INC RICHARDSON TEX
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The objective of the contract was to investigate Liquid Phase Epitaxial Process modifications which could lead to the high yield fabrication of high power domed LEDs with high quantum efficiencies. The process modifications investigated included 1 growth in a slider boat, 2 growth of an additional p layer and 3 growth of a p GaAlAs epitaxial layer. The materials from the different growth methods were evaluated using a flat chip emitter and dome emitters were fabricated from the material which appeared most promising in the test procedure. The highest quantum efficiency devices were fabricated from material which did not have second layers grown on and which had p-layers which were greater than 0.002 inches thick. Author
- Electrooptical and Optoelectronic Devices