Silicon Nitride: A Promising Material for Radome Applications.
ARMY MATERIALS AND MECHANICS RESEARCH CENTER WATERTOWN MASS
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Dielectric properties of various reaction-sintered and hot-pressed silicon nitride specimens were measured at 10 GHz at room temperature, 1000F and 2000F. Dielectric constant values ranged from 5.5 to 9.3, and loss tangent values from 0.001 to 0.16. The major detrimental impurity was identified as residual unreacted silicon. Author
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