Nature of Secondary Radiation Defects in Silicon of the p-Type,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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Samples of p-type silicon alloyed with boron, aluminum, or gallium, were irradiated at 78K with electrons having an energy of 1.5 MeV, and then subjected to isochronous annealing in the temperature range of 78 -- 700K. Information on annealing and the conditions of radiation defects were obtained from an analysis of the data on the carrier concentration, which in turn was determined by measuring the Hall effect and the electric conductivity.
- Solid State Physics