Contacts of Thin Films of Indium-Tellurium and Gallium-Tellurium System Compounds with Group I, III, V Metals and Tellurium,
ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA
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The current-voltage characteristics, photosensitivity, photoemf, and surface states of In3Te8, In3Te4, Ga3Te4, Ga3Te8, GaTe3 and CdIn2Te3 contacts with silver, gold, copper, indium, aluminum, bismuth, and tellurium were studied. The irreversible phenomena occurring in these contacts during their thermal and electrical formation at less than 0.00001 torr were examined. The experimental results obtained with In3Te4 are explained by the active interaction of electrode compounds. With the film and modification of the surface film state due to the particle drift of the cathode compounds.
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