Accession Number:

AD0786038

Title:

Equivalent Circuit Parameters of Microwave Power Transistors at High Injection Levels,

Descriptive Note:

Corporate Author:

ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Report Date:

1974-04-16

Pagination or Media Count:

14.0

Abstract:

Circuit parameters are derived for a high-frequency planar drift power transistor. In determining low-signal parameters, the inductances of transistor base, emitter, and collector and the parasitic reactive elements of the measuring circuits are critical.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE