Changes of the Photoelectric Properties of Cadmium Selenide Evaporated Films during Activation,
ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA
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When activating CdSe films by means of diffusion annealing two processes are observed a a sharp increase in the dark resistance during the first 30 min. and b a slower change during subsequent annealing during the subsequent 20 hr. A change in resistance during the first process is related to the decrease in concentration of the electrons on the donor admixtures with an activation energy of 0.6-0.7 ev. The mobility of carriers of photoelectric effect at a temperature close to room temperature or higher is on the same order of magnitude as the mobility in monocrystals. The depth of occurrence and the concentration of the adhesion levels are partically invariable during the activation process.
- Solid State Physics