Annealing Studies of Al(+) Implanted SiO2 Thin Films.
PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB
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The trapping of charge in the amorphous SiO2 layer of metal-oxide-semiconducting devices under ionizing radiation conditions can be modified by implanting the oxide with Al ions. Optical absorption, E.S.R. and MOS capacitance methods have been used to study implantation induced defects in the oxide, the associated change in oxide charge storage and the stability of the defects to post implantation thermal annealing. A simple model of negative charge storage in the implantation zone combined with positive charge storage in the interface regions has been examined. Results of this modeling are discussed. Author
- Electrical and Electronic Equipment
- Solid State Physics