Accession Number:

AD0785538

Title:

Polarization Dependence of the Free Carrier Reflectivity of Heavily Doped Semiconductors,

Descriptive Note:

Corporate Author:

FRANKFORD ARSENAL PHILADELPHIA PA

Personal Author(s):

Report Date:

1973-08-01

Pagination or Media Count:

33.0

Abstract:

Classical Drude theory is used to calculate the optical reflectivity and transmissivity for various polarizations, relaxation times, and angles of incidence for a representative extrinsic semiconductor n-doped InSb near its free carrier plasma wavelength lambda sub p. Thus far, most infrared measurements on heavily doped semiconductors have been reported for normal incidence. By a propert choice of dopant concentration, lambda sub p can be tailored to lie within the atmospheric infrared transmission region between 8 and 14 micrometers. Suitably n-doped semiconductors, such as InSb, Ge, and Si, should exhibit the polarization features described above and thus offer potential application as low intensity optical components, such as reflection polarizers and cut-off filters, for opticallaser systems operating in this spectral region. Modified author abstract

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE