Analysis of Physical Parameters in Electron-Beam-Irradiated Semiconductor Diodes.
NAVAL RESEARCH LAB WASHINGTON D C
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The basic interaction theory of parameters such as thickness, impurity density, area, and external supply voltage required for various power-frequency applications is discussed for multiple electron-beam-irradiated semiconductor diodes connected in series. Two general approaches are outlined for use in CW class-B applications 1 a minimum-thickness approach for reducing the transit-time limitations for a tuned-output high-frequency type of operation, and 2 a minimum-area approach for reducing the diode capacitance, as is desired for wide-bandwidth applications. Guidelines are also provided for changing the design conditions by altering constraints such as maximum allowed electric field, minimum allowed electric field, and heat dissipation. The power-frequency capabilities of the device are discussed in terms of present state-of-the-art fabrication limitations in controlling thickness, electromigration of the Al overlayer, uniformity of the electron beam, and electron-hole generation rate. Modified author abstract
- Electrical and Electronic Equipment