Accession Number:

AD0785082

Title:

Analysis of Physical Parameters in Electron-Beam-Irradiated Semiconductor Diodes.

Descriptive Note:

Interim rept.,

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON D C

Personal Author(s):

Report Date:

1972-03-31

Pagination or Media Count:

32.0

Abstract:

The basic interaction theory of parameters such as thickness, impurity density, area, and external supply voltage required for various power-frequency applications is discussed for multiple electron-beam-irradiated semiconductor diodes connected in series. Two general approaches are outlined for use in CW class-B applications 1 a minimum-thickness approach for reducing the transit-time limitations for a tuned-output high-frequency type of operation, and 2 a minimum-area approach for reducing the diode capacitance, as is desired for wide-bandwidth applications. Guidelines are also provided for changing the design conditions by altering constraints such as maximum allowed electric field, minimum allowed electric field, and heat dissipation. The power-frequency capabilities of the device are discussed in terms of present state-of-the-art fabrication limitations in controlling thickness, electromigration of the Al overlayer, uniformity of the electron beam, and electron-hole generation rate. Modified author abstract

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE