Electrical Conduction through Thermal and Anodic Oxides of Indium Antimonide,
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
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Metal-insulator-semiconductor MIS devices formed with InSb are finding application as infrared image converters and detectors and as a voltage controlled surface wave delay line. These MIS devices require a stable insulating layer with high resistance and breakdown strength. This investigation has been conducted in order to better evaluate the oxide as a possible insulator for InSb MIS devices. The characteristics of current flow through thermally and anodically grown oxides of vapor deposited and bulk InSb are reported. The thermally grown oxides have low resistance similar to In2O3, but the anodic oxides are insulating and the current flow is characteristic of Schottky emission.
- Infrared Detection and Detectors
- Solid State Physics