Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide,
CALIFORNIA INST OF TECH PASADENA DIV OF ENGINEERING AND APPLIED SCIENCE
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Part I With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
- Solid State Physics