Accession Number:

AD0784666

Title:

Electron Beam Semiconductor S-Band Amplifier.

Descriptive Note:

Triannual rept. no. 4, 1 Jul 73-31 Jan 74,

Corporate Author:

WATKINS-JOHNSON CO PALO ALTO CALIF

Personal Author(s):

Report Date:

1974-08-01

Pagination or Media Count:

34.0

Abstract:

During the period, six diodes were placed on life test and successfully passed the required 1000 hours of operation with stable reverse breakdown voltage characteristics. Two operating S-band tubes were built and tested at 3 GHz. These tubes used pencil electron beams, mailbox helix deflection structures, and targets composed of diodes working into radial line resonators. Peak power output of 20.4 watts was achieved at a duty factor of 0.001. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE