Electron Beam Semiconductor S-Band Amplifier.
Triannual rept. no. 4, 1 Jul 73-31 Jan 74,
WATKINS-JOHNSON CO PALO ALTO CALIF
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During the period, six diodes were placed on life test and successfully passed the required 1000 hours of operation with stable reverse breakdown voltage characteristics. Two operating S-band tubes were built and tested at 3 GHz. These tubes used pencil electron beams, mailbox helix deflection structures, and targets composed of diodes working into radial line resonators. Peak power output of 20.4 watts was achieved at a duty factor of 0.001. Author
- Electrical and Electronic Equipment