Laser Studies in In(1-x)Ga(x)P, InAs(x)P(1-x), In(x)Ga(1-x)As and Related III-V Compounds.
Final rept. 10 Nov 71-9 Apr 74,
ILLINOIS UNIV URBANA MATERIALS RESEARCH LAB
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Constant-temperature liquid phase epitaxy CT-LPE has been used to synthesize laser-quality InxGa1-xAs, In1-xAsxP, In1-xGaxP, and In1-xGaxAsyP1-y. Zinc-diffused junctions in CT-LPE InGaAs operate pulsed to temperatures as high as 265K, and with further development would operate perhaps to 300K. The sequential CT-LPE growth of an n-type layer of In1-xGaxP x approximately 0.63, on a lattice-matched GaAs1-yPy y approximately 0.25 substrate, followed by the growth of a similar p-type layer has provided the first junction laser to operate in the yellow about 5900A. The structure approximates in behavior a single heterojunction, and if duplicated in InGaAs, would doubtless lead to a 300K laser at about one micrometer or longer wavelength. Most of this work is described in detail in a series of appendices as well as various detailed features of InGaP. Also described is a plasma electron beam device for exciting laser operation in homogeneous samples. Modified author abstract
- Lasers and Masers
- Solid State Physics