III-V Surface Studies.
Interim technical rept. no. 1, 1 Nov 73-31 Jan 74,
RCA LABS PRINCETON N J
Pagination or Media Count:
The authors have studied the structural and chemical state of the GaAs surface and have been able to characterize this surface at various stages during activation to a state of Negative Electron Affinity which is produced by the adsorption of cesium and oxygen. The LEED-Auger properties, the cesium and oxygen interactions, and the photoemissive characteristics have been studied as a function of temperature from -170 to 600C. An atomic model for the NEA GaAsCsO surface is discussed. Studies have begun of the GaInAs ternary system in order to extend the photoemissive response into the 1- to 2-micrometer region. Plans have been developed for the systematic study of compound semiconductor surface structures in terms of differences in atomic radii and electronegativity between the constituent III-V atoms. Modified author abstract
- Radiation and Nuclear Chemistry
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics