Accession Number:

AD0784206

Title:

III-V Surface Studies.

Descriptive Note:

Interim technical rept. no. 1, 1 Nov 73-31 Jan 74,

Corporate Author:

RCA LABS PRINCETON N J

Personal Author(s):

Report Date:

1974-02-01

Pagination or Media Count:

37.0

Abstract:

The authors have studied the structural and chemical state of the GaAs surface and have been able to characterize this surface at various stages during activation to a state of Negative Electron Affinity which is produced by the adsorption of cesium and oxygen. The LEED-Auger properties, the cesium and oxygen interactions, and the photoemissive characteristics have been studied as a function of temperature from -170 to 600C. An atomic model for the NEA GaAsCsO surface is discussed. Studies have begun of the GaInAs ternary system in order to extend the photoemissive response into the 1- to 2-micrometer region. Plans have been developed for the systematic study of compound semiconductor surface structures in terms of differences in atomic radii and electronegativity between the constituent III-V atoms. Modified author abstract

Subject Categories:

  • Radiation and Nuclear Chemistry
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE