Investigation of Chromium-Doped Oxides.
Final rept. 1 Nov 71-1 Nov 73,
ROCKWELL INTERNATIONAL CORP ANAHEIM CALIF ELECTRONICS RESEARCH DIV
Pagination or Media Count:
Part I of the report describes results obtained during the investigation of the mechanisms by which chromium-doping of a silicon-dioxide gate insulator may improve the radiation resistance of MOS devices. Part II details the fabrication and testing of a CMOSSOS 4-bit adder that employed chrome-doped and aluminum ion-implanted gate oxides to provide improved radiation hardness.
- Electrical and Electronic Equipment
- Solid State Physics