Accession Number:

AD0783988

Title:

Investigation of Chromium-Doped Oxides.

Descriptive Note:

Final rept. 1 Nov 71-1 Nov 73,

Corporate Author:

ROCKWELL INTERNATIONAL CORP ANAHEIM CALIF ELECTRONICS RESEARCH DIV

Personal Author(s):

Report Date:

1973-11-01

Pagination or Media Count:

155.0

Abstract:

Part I of the report describes results obtained during the investigation of the mechanisms by which chromium-doping of a silicon-dioxide gate insulator may improve the radiation resistance of MOS devices. Part II details the fabrication and testing of a CMOSSOS 4-bit adder that employed chrome-doped and aluminum ion-implanted gate oxides to provide improved radiation hardness.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE