Electron Beam Semiconductor High Current Video Pulser.
Final rept. 23 Jan 73-22 Jan 74,
WATKINS-JOHNSON CO PALO ALTO CALIF
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Ten EBS high current pulse amplifiers were fabricated, tested, and delivered to ECOM for life testing. The diodes used in these devices had an active area of 0.35 sq cm and were fabricated with an integral gold beam shield over the junction boundry to prevent diode reverse breakdown degradation due to beam illumination. The diodes were mounted on BeO substrates in order to be able to x-ray and evaluate the diode to substrate bond. Each of the devices was tested at approximately 40 A peak output into a 1 ohm load with a pulse risetime of 3 nanoseconds. Author
- Electrical and Electronic Equipment