Bipolar Medium-Scale Integrated Circuit Hardening. Volume I. Phase I.
Final rept. 1 Jan-30 Sep 73,
TEXAS INSTRUMENTS INC DALLAS
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The results of the shallow device fabrication indicate that low-power Schottky circuitry can be fabricated with full fan-out up to 10 to the 15th power neutronsq cm. Three profiles have been identified that use an arsenic emitter and a shallow base junction. Ion implantation is used to a high degree. A multilevel metal system with compatible SiCr thin-film resistors has been demonstrated. The improved dielectric effort did not result in a feasible process for this program, but it did demonstrate several fabrication processes that can lead to an improved dielectric process. Author
- Electrical and Electronic Equipment