Accession Number:

AD0783360

Title:

Bipolar Medium-Scale Integrated Circuit Hardening. Volume I. Phase I.

Descriptive Note:

Final rept. 1 Jan-30 Sep 73,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Report Date:

1974-04-01

Pagination or Media Count:

161.0

Abstract:

The results of the shallow device fabrication indicate that low-power Schottky circuitry can be fabricated with full fan-out up to 10 to the 15th power neutronsq cm. Three profiles have been identified that use an arsenic emitter and a shallow base junction. Ion implantation is used to a high degree. A multilevel metal system with compatible SiCr thin-film resistors has been demonstrated. The improved dielectric effort did not result in a feasible process for this program, but it did demonstrate several fabrication processes that can lead to an improved dielectric process. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE