IR Window Studies
Quarterly technical rept. no. 6
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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The theory of thermal lensing is reviewed and presented in modified form. A method to determine the contributions of various processes to multiphonon absorption is proposed. For GaAs, the lowest 10.6 micrometers absorptions found have a weak temperature dependence corresponding to theoretical predictions for multiphonon absorption. Layers of GaAs up to 2mm thick have been made by chemical vapor transport. The layers had inclusions, however, and the high 10.6 micrometers absorption probably result from these. A method for oxygen detection in Te-doped GaAs-Te was developed. In GaAs-Si, an oxygen content below the Si content cannot be determined. Diffuse streaks in the diffraction pattern of GaAs are attributed to thermal diffuse scattering of electrons at acoustic phonons. KBr with a 10.6 micrometers absorption of .0011 cm has been grown. A TEA laser for damage studies is being assembled.
- Lasers and Masers