Characteristics of SiO2 Films Grown in an HcL Purged Environment.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The major purpose of the research is to study how the addition of HCl affects the characteristics of oxides typically used in integrated circuit manufacture. HCl was used in two ways an HClO2 mixture was used to clean the oxidation tube prior to oxidation, and an HClO2 mixture was used in an in situ process. The oxide parameters having a significant impact on device performance were identified and measured by using both C-V and I-V techniques. An HCl distribution system was constructed and used with a conventional oxidation furnace. Negligible trapping of sodium ions at the Si-SiO2 interface was observed for oxides grown in an HCl cleaned tube and conventional oxides, while strong trapping of the ions was observed when HCl was used in situ. Modified author abstract
- Electrical and Electronic Equipment
- Fabrication Metallurgy
- Solid State Physics