The Physics of Interface Interactions Related to Reliability of Future Electronic Devices
Semi-annual technical rept.
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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Contents The reliability of semiconductor-insulator interfaces- Impact ionization model for dielectric instability breakdown Phosphorus precipitation on SiSiO2 interfaces Band structure and switching in insulators--Optical properties of allotropic forms of SiO2 Structural transformations as observed by TEM during electrical switching in amorphous Ge- Te Instabilities associated with metal-glass Interactions--Analysis of thin film structures with nuclear backscattering and X-ray diffraction Reactions of thin metal films with Si or SiO2 substrates.
- Electrical and Electronic Equipment
- Solid State Physics