Accession Number:

AD0781820

Title:

The Physics of Interface Interactions Related to Reliability of Future Electronic Devices

Descriptive Note:

Semi-annual technical rept.

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s):

Report Date:

1973-07-31

Pagination or Media Count:

102.0

Abstract:

Contents The reliability of semiconductor-insulator interfaces- Impact ionization model for dielectric instability breakdown Phosphorus precipitation on SiSiO2 interfaces Band structure and switching in insulators--Optical properties of allotropic forms of SiO2 Structural transformations as observed by TEM during electrical switching in amorphous Ge- Te Instabilities associated with metal-glass Interactions--Analysis of thin film structures with nuclear backscattering and X-ray diffraction Reactions of thin metal films with Si or SiO2 substrates.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE