High Data Rate Magnetic Memory Devices.
Semiannual rept. no. 1, 1 Apr 73-1 Jan 74,
ROCKWELL INTERNATIONAL CORP ANAHEIM CALIF ELECTRONICS RESEARCH DIV
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The report describes the progress currently being made toward establishing a BORAM chip design at Rockwell International under ECOM Contract DAAB07-70-C-0258. The work reported here represents a continuation of the previous progam which was aimed at developing high frequency components and materials. The emphasis of this report is on device modeling and its application to detector design, high frequency material evaluation. Although a feasibility chip is being constructed in connection with this program the details of the latter work will be reported in the following annual report. This report deals primarily with the preliminaries required to establish that chip design and the choice of material required for operation at 250 kHz. The detector sensitivity measurements reported here were done in connection with another program as was the high frequency material development growth of Ca-Ge. Author
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