Reliability of High Field Semiconductor Devices
Final rept. 1 Apr 1973-31 Jan 1974
MICROWAVE ASSOCIATES INC BURLINGTON MA
Pagination or Media Count:
The report describes the results of a program of investigation concerning the reliability and failure modes of gallium arsenide Gunn and IMPATT diodes. Data is presented concerning the burn-out distribution in time of Gunn diodes. Also, the changes in dc and RF parameters of 700 Gunn and 100 gallium arsenide IMPATT diodes resulting from 24 to 168 hours of dc high temperature burn-in are present. The results of long-term RF burn-in experiments are presented. Optical and electron microscope photographs are presented which are used in the analysis of the manufacturing defects leading to early failure in Gunn diodes. Correction of these defects has lead to an increased 24-hour burn-in yield.
- Electrical and Electronic Equipment