Accession Number:

AD0781292

Title:

Growth and Investigation of Hexagonal Boron Nitride.

Descriptive Note:

Final technical rept. 1 Mar 73-31 Mar 74,

Corporate Author:

VARIAN ASSOCIATES PALO ALTO CALIF

Personal Author(s):

• Yep,T. O.

Report Date:

1974-04-01

Pagination or Media Count:

14.0

Abstract:

BN films have been chemically vapor deposited on various substrates. Ordered polycrystalline films are obtained on the 5,-6,1 Si substrate. A transit-charge-technique apparatus for the direct measurement of the carrier-drift velocity has been constructed and tested with drift-velocity measurements in Si. As yet, drift-velocity measurements on the BN films have not been successful. Author

Descriptors:

• *Semiconducting films
• *Boron nitrides
• *Crystal growth
• Thin films
• Substrates
• Silicon
• Polycrystalline
• Electron transport

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE