Growth and Investigation of Hexagonal Boron Nitride.
Final technical rept. 1 Mar 73-31 Mar 74,
VARIAN ASSOCIATES PALO ALTO CALIF
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BN films have been chemically vapor deposited on various substrates. Ordered polycrystalline films are obtained on the 5,-6,1 Si substrate. A transit-charge-technique apparatus for the direct measurement of the carrier-drift velocity has been constructed and tested with drift-velocity measurements in Si. As yet, drift-velocity measurements on the BN films have not been successful. Author
- Solid State Physics