Integrated Optical Circuits
Semiannual technical summary, 1 Jul-31 Dec 1973
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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InxGa1-xAs avalanche photodiodes have been integrated into GaAs waveguide structures by selective epitaxial deposition. Measurements of the ionization coefficients of electrons alpha and holes beta have been made for GaAs by using a special type of GaAs Schottky barrier avalanche photodiode structure. A new type of GaAs avalanche photodiode which has considerable advantages for detection at wavelengths up to 0.93 micrometer has been investigated. Significant progress has been made in the vapor epitaxial growth of Hg1-xCdxTe on CdTe substrates by H2 transport. High-energy proton bombardment has been used to fabricate waveguides for 10.6 micrometer in CdTe. Coupling of 10.6 micrometer radiation into CdTe waveguides has been explored. The feasibility of integrated surface acoustic wave modulators for 10.6 micrometer has been investigated.
- Acoustooptic and Optoacoustic Devices