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A Study of the Power Handling Ability of Gallium Arsenide and Silicon, Single and Double Drift Impatt Diodes,
POST OFFICE RESEARCH DEPT LONDON (ENGLAND)
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The concept of a critical current density effect on the operation of silicon and gallium arsenide IMPATT diodes is examined using large signal analysis. This critical current density effect does not appear to exist in the form that is generally thought of to-date. However, other physical processes develop at high current densities which gradually degrade diode efficiencies. These processes are worse in silicon diodes than in gallium arsenide diodes because at a given frequency of operation silicon diodes need a lower doping density than gallium arsenide diodes due to the lower saturated drift velocities of carriers in gallium arsenide. Reasons are suggested which explain why these other processes develop before a true critical current density limit is seen. Modified author abstract
APPROVED FOR PUBLIC RELEASE