Accession Number:

AD0780536

Title:

Susceptibility of UHF RF Transistors to High Power UHF Signals.

Descriptive Note:

Interim rept. Jul 72-Jun 73,

Corporate Author:

STATE UNIV OF NEW YORK BUFFALO

Personal Author(s):

• Hewitt,Hollis J.
• Whalen,James J.

Report Date:

1974-05-01

Pagination or Media Count:

61.0

Abstract:

The report describes a program that was initiated to determine what effects high power UHFmicrowave signals have upon solid state components such as transistors used in RF amplifier stages of UHFmicrowave receivers. The effects of CW power at 200 MHz upon the following transistor parameters were monitored 1 small signal power gain 2 noise figure 3 breakdown voltages 4 leakage currents 5 Beta hFE. The one parameter that did degrade significantly when CW UHF power was applied was the dc current gain Beta. A change in Beta from an initial value of 60 to a value of 15 after exposure is a representative case. These changes in Beta occur at incident power levels significantly below that required to cause component failure. The parameter Beta is a good parameter to monitor during CW EMV investigations. Modified author abstract

Descriptors:

• *Transistors
• Radiation effects
• Ultrahigh frequency
• High power
• Microwaves
• Continuous waves
• Bipolar transistors
• Silicon
• Electromagnetic radiation
• Vulnerability

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE