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IR Window Studies
Quarterly technical rept. no. 5
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
Pagination or Media Count:
The temperature dependence of the 10 micrometer absorption of GaAs in air shows contributions by free carriers above 250C, and surface effects due to oxidation. The dielectric constant of GaAs is found to be 12.4 plus or minus 0. 12. An accurate method to determine the oxygen content of GaAs has been developed. Results obtained so far given 10 to the 17 power - 10 to the 18th powercc or 6 x 10 to the 14th power O atoms per sqcm surface. Conditions favorable to the growth of thick layer GaAs have been established. Pure KCl has K approximately 10 to the minus 4th powercm. KBr has been purified and crystals have been grown. Analysis of the defect structure of CdTe was completed. Experimental conditions leading to high resistivity, stoichiometric material were established. Hot pressing of CdTe was started. The fundamental processes underlying multiphonon absoroption were investigated. A caustic surface analysis for thermal lensing was made, and the stress and the stress fields in non-uniformly stresses windows were determined. Modified author abstract
APPROVED FOR PUBLIC RELEASE