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Radiation Effects of MOS Gate Insulators.
Final rept. Jul-Dec 73,
LEHIGH UNIV BETHLEHEM PA
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Impurity metal ions sodium, aluminum, chromium, and gold were diffused and grown into oxide films on silicon which were then exposed to 1,000,000 rads of ionizing radiation from a cobalt-60 source. The effects of radiation were observed by chemical analysis to determine ion transport and by conductance and capacitance measurements to determine oxide charge and distribution of surface state density. Modified author abstract
APPROVED FOR PUBLIC RELEASE