Accession Number:

AD0779908

Title:

EBS (Electron Beam Semiconductor) Pulse Amplifier Life Test.

Descriptive Note:

Final engineering rept. 13 Feb 73-28 Jan 74.

Corporate Author:

WATKINS-JOHNSON CO PALO ALTO CALIF

Personal Author(s):

Report Date:

1974-01-28

Pagination or Media Count:

18.0

Abstract:

Highly stable, high voltage, beam shield passivated diodes were fabricated for use in EBS electron beam semiconductor grid controlled pulse amplifiers. Six EBS pulse amplifiers were fabricated using these diodes and four of the EBS amplifiers were operated on life test for a total socket time of 14,500 hours. Data is presented showing that stable diode operation was obtained. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE