EBS (Electron Beam Semiconductor) Pulse Amplifier Life Test.
Final engineering rept. 13 Feb 73-28 Jan 74.
WATKINS-JOHNSON CO PALO ALTO CALIF
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Highly stable, high voltage, beam shield passivated diodes were fabricated for use in EBS electron beam semiconductor grid controlled pulse amplifiers. Six EBS pulse amplifiers were fabricated using these diodes and four of the EBS amplifiers were operated on life test for a total socket time of 14,500 hours. Data is presented showing that stable diode operation was obtained. Author
- Electrical and Electronic Equipment