Accession Number:

AD0779314

Title:

Photoluminescence from Irradiation-Induced Defects in Silicon,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1974-04-01

Pagination or Media Count:

181.0

Abstract:

New information concerning the identification of radiative defects in Si is provided by three sets of experiments which study the photoluminescence from Si irradiated with electrons at low temperature 100K, Si subjected to ion implantations, and electron irradiations of Al and Ga doped Si. Modified author abstract

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE