Accession Number:

AD0779241

Title:

Hysteresis Effects in the Semiconductor - Metal Transition of Cr-Doped VO2,

Descriptive Note:

Corporate Author:

QUEEN'S UNIV KINGSTON (ONTARIO) DEPT OF PHYSICS

Personal Author(s):

Report Date:

1973-07-25

Pagination or Media Count:

6.0

Abstract:

The termal hysteresis of the semiconductor to metal transition V1-xCrxO2 with 0 or x or 0.023 was found to increase with x because of a corresponding rise in the heating transition temperature. No significant change was observed in the temperature associated with the cooling transition. A qualitative explanation is offered for these results on the basis of an assumed relationship between the free energy and a lattice distortion parameter. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE