1.06 Micron Intensified Silicon Target TV Camera Tube.
Final rept. 7 May 71-7 Jan 74,
RCA ELECTRONIC COMPONENTS PRINCETON N J ELECTRO-OPTICS LAB
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The objective of this contract was the fabrication and testing of negative electron affinity NEA II-V transmission secondary emission TSE dynodes which are to be incorporated into a silicon intensifier tube. The photocathode is to be an NEA GaAs semitransparent cathode. A reliable technique for fabricating GaAs dynodes has been developed which employs a combination of chemical and electromechanical etching. Uniformly thin smooth 0.5- to 0.8-cm diameter TSE dynodes 2 to 10 micrometers thick have been made. TSE gains of 2 to 20 have been observed in the 5- to 8-keV primary energy range for flat-band GaAs TSE dynodes. The low gains at these energies are the direct result of very high surface recombination velocities at the inactive surface. Seven image tubes have been built five proximity-focused image intensifier tubes and two SIT tubes with a GaAs photocathode and a GaAs TSE dynode. The design and fabrication of each of these tubes are discussed. Author
- Electrooptical and Optoelectronic Devices