Accession Number:

AD0777982

Title:

Defect Creation in Semiconductors,

Descriptive Note:

Corporate Author:

STATE UNIV OF NEW YORK ALBANY DEPT OF PHYSICS

Report Date:

1973-01-01

Pagination or Media Count:

355.0

Abstract:

The bulk of the material deals with defects introduced by the interaction of energetic particles with the lattice, and the major portion of that deals with what is called displacement damage. Energetic particles interact with the lattice in two ways 1 ionization of the lattice and in most cases this is the dominant process and, 2 direct collisions with the nucleus which result in a recoil energy being imparted to that nucleus atom.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE