Vacuum UV Absorption Spectra Induced by Al(+) Ion Implantation in SiO2 Films on Sapphire.
PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB
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Measurements are reported on the vacuum ultraviolet absorption spectra induced in SiO2 films by Al ion implantation. Studies have been made of the thermal stability of the associated defects and their response to X-irradiation subsequent to partial annealing. The implantation has been found to introduce an absorption band at 6.2 eV in films derived from the thermal decomposition of silane and at 7.5 eV in a fully oxidized S.O.S. film. In addition to introducing these vacuum ultraviolet absorption bands the implantation moves the fundamental absorption edge to lower energies. This band edge shift anneals in parallel to the disappearance of the absorption bands and X-irradiation after a partial annealing is found to cause it to move towards lower energies again. This behavior is discussed in terms of the oxide structure. Author
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