Accession Number:

AD0777915

Title:

Study of Electronic Transport and Breakdown in Thin Insulating Films

Descriptive Note:

Semi-Annual technical rept. no. 1

Corporate Author:

PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

• Lampert, Murray A.
• Johnson, Walter C.
• Bottoms, Wilmer R.

Report Date:

1973-01-01

Pagination or Media Count:

98.0

Abstract:

A comprehensive research program is under way for the characterization of electronic transport and dielectric breakdown properties of thin insulating films on Si which are technologically important, namely SiO2, Al2O3, Si3N4 and their composites. The main experimental approaches are Non- destructive breakdown of un-metallized films exposed to a corona discharge in a suitable gas dry air, N2, rare gas, etc., locally destructive, self-quenching breakdown of MIS capacitor structures, optical charge - optical and thermal discharge studies of electronic traps in the films, kilovolt electron-beam probe studies of the films, including damage induced by the beam. Accompanying theoretical studies initially are concerned with Monte Carlo calculations of hot-electron distributions induced by high electric fields in the film.

Descriptors:

• *DIELECTRIC FILMS
• *INSULATION
• *SEMICONDUCTING FILMS
• ALUMINATES
• CAPACITORS
• DIELECTRIC PROPERTIES
• ELECTRON TRANSPORT
• FAILURE
• INTEGRATED CIRCUITS
• SILICON
• SILICON DIOXIDE
• SILICON NITRIDES
• SUBSTRATES
• THIN FILMS
• TUNNELING(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE