Simplified Microcircuit Modeling.
Final rept. 31 May 72-14 Nov 73,
NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF
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Results are presented on the application of previously developed techniques to generate radiation-inclusive simplified models of several types of digital and linear microcircuits of Medium-Scale IntegratedLarge-Scale Integrated MSILSI complexity. Methods for including the effects of neutron degradation and electrical pulse overstress in simplified terminal models are developed. Models were generated for a Transistor-Transistor Logic TTL decade counter, ComplementaryMetal Oxide Semiconductor CMOS full adder, voltage comparator, videobuffer amplifier, low-levelvoltage clamp amplifier, and a bootstrap amplifier. The models represent the electrical and radiation responses of the devices within engineering accuracy and are applicable to the computer-aided design and analysis of large electronic systems. It has been concluded that simplified microcircuit modeling is a viable and important technology that allows systems analysis on existing computer codes. Further development of generalized techniques is recommended. Author
- Electrical and Electronic Equipment