Study of Electronic Transport and Breakdown in Thin Insulating Films
Semi-Annual technical rept. no. 2
PRINCETON UNIV NJ DEVICE PHYSICS LAB
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Progress is reported in the characterization of electronic transport and dielectric breakdown properties of technologically important, thin insulating films on Si, namely SiO2, Al2O3, Si3N4 and their composites. Theoretical modeling of self-quenching breakdown is under study with tunneling, joule-heating and their interaction feedback as the key ingredients. The dynamical behavior of runaway, hot-electron distributions has been extensively studied by graphical and computer techniques.
- Electrical and Electronic Equipment
- Solid State Physics