Accession Number:

AD0777817

Title:

Study of Electronic Transport and Breakdown in Thin Insulating Films

Descriptive Note:

Semi-Annual technical rept. no. 2

Corporate Author:

PRINCETON UNIV NJ DEVICE PHYSICS LAB

Personal Author(s):

• Lampert, Murray A.
• Johnson, Walter C.
• Bottoms, Wilmer R.

Report Date:

1973-07-01

Pagination or Media Count:

127.0

Abstract:

Progress is reported in the characterization of electronic transport and dielectric breakdown properties of technologically important, thin insulating films on Si, namely SiO2, Al2O3, Si3N4 and their composites. Theoretical modeling of self-quenching breakdown is under study with tunneling, joule-heating and their interaction feedback as the key ingredients. The dynamical behavior of runaway, hot-electron distributions has been extensively studied by graphical and computer techniques.

Descriptors:

• *DIELECTRIC FILMS
• *INSULATION
• ALUMINATES
• CAPACITORS
• ELECTRON TRANSPORT
• INTEGRATED CIRCUITS
• SILICON
• SILICON DIOXIDE
• SILICON NITRIDES
• THIN FILMS
• TUNNELING(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE