Accession Number:

AD0777153

Title:

Infrared Sensitive Trap Distribution in Semiconductors.

Descriptive Note:

Technical rept.,

Corporate Author:

MACKAY SCHOOL OF MINES RENO NEV SEISMOLOGICAL LAB

Personal Author(s):

Report Date:

1973-12-01

Pagination or Media Count:

144.0

Abstract:

A system to observe infrared IR stimulation spectra of IR sensitive phosphors was developed and assembled. Powder phosphors applied in the form of a coating on sapphire discs and zinc sulfide single crystals, were tested for response to infrared of wavelengths from 0.7 micrometers to 10 micrometers. The samples under test could be cooled to liquid helium temperature 4.2 degree K. Special techniques were developed to observe very weak infrared stimulated luminescence in the presence of strong background phosphorescence. In zinc sulfide copper lead phosphors at 77 degree K, traps were detected at 1.1 electron volts and 0.84 electron volts from a band edge. Measured infrared absorption cross sections of 0.87 x 10 super minus 17 centimeter squared and 4.0 x 10 super minus 17 centimeter squared were of the same order of magnitude as calculated values of 5.9 x 10 super minus 17 centimeter squared and 4.5 x 10 super minus 17 centimeter squared respectively. Modified author abstract

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE